1. Dulmar guud oo ku saabsan xaaladda tignoolajiyada guud ee hadda ee LED-yada ku saleysan silicon

Kobaca agabka GaN ee substrate-ka silikoon waxa uu wajahayaa laba caqabadood oo farsamo oo waaweyn. Marka hore, isku-dheellitir la'aanta shafka ah ee ilaa 17% ee u dhaxaysa substrate-ka silikoon iyo GaN waxay keenaysaa cufnaanta sare ee gudaha walxaha GaN, kaas oo saameeya waxtarka iftiinka; Marka labaad, waxaa jira isku-dheellitir la'aan kulaylka ah ilaa 54% inta u dhaxaysa substrate-ka silikoon iyo GaN, taas oo ka dhigaysa filimada GaN inay u nugul yihiin inay dillaacaan ka dib korriinka heerkulka sare iyo hoos u dhaca heerkulka qolka, oo saameeya wax soo saarka wax soo saarka. Sidaa darteed, kobaca lakabka buffer ee u dhexeeya substrate silikoon iyo filimka khafiifka ah ee GaN ayaa aad muhiim u ah. Lakabka difaaca ayaa door ka ciyaara yaraynta cufnaanta kala-baxa gudaha GaN iyo yaraynta dildilaaca GaN. Ilaa xad weyn, heerka farsamada ee lakabka bakhaarku wuxuu go'aamiyaa waxtarka gudaha gudaha iyo wax-soo-saarka LED-ka, taas oo ah diiradda iyo dhibka silikoon-ku-saleysan.LED. Ilaa hadda, iyada oo maalgelin weyn lagu sameeyay cilmi-baarista iyo horumarinta labadaba warshadaha iyo tacliinta, caqabaddan tignoolajiyada asal ahaan waa laga gudbay.

Substrate-ka Silicon wuxuu si xoog leh u nuugaa iftiinka muuqda, markaa filimka GaN waa in loo wareejiyaa substrate kale. Kahor wareejinta ka hor, muraayad milicsi sare ayaa la geliyaa inta u dhaxaysa filimka GaN iyo substrate-ka kale si looga hortago in iftiinka GaN uu nuugo substrate-ka. Qaab dhismeedka LED ka dib wareejinta substrate-ka waxaa loo yaqaanaa warshadaha sida jilibka Filimka khafiifka ah. Chips filimada khafiifka ah ayaa faa'iidooyin ka badan jajabyada qaab dhismeedka rasmiga ah ee soo jireenka ah marka loo eego fidinta hadda, habaynta kulaylka, iyo isku midka ahaanshaha barta.

2. Dulmarka heerka codsiga guud ee hadda jira iyo dulmarka suuqa ee LEDs substrate silicon

LEDs-ku-saleysan Silicon waxay leeyihiin qaab-dhismeed toosan, qaybin isku mid ah hadda, iyo fidin degdeg ah, taasoo ka dhigaysa inay ku habboon yihiin codsiyada awoodda sare leh. Iyada oo ay ugu wacan tahay soo saaristiisa iftiin hal dhinac ah, jihaynta wanaagsan, tayada iftiinka wanaagsan, waxay si gaar ah ugu habboon tahay iftiinka mobilada sida iftiinka baabuurta, nalalka raadinta, nalalka macdanta, nalalka taleefanka gacanta, iyo meelaha iftiinka sare leh oo leh shuruudo tayo sare leh. .

Tiknoolajiyada iyo habka loo yaqaan 'Jingneng Optoelectronics silicon substrate LED' ayaa noqday qaan. Iyada oo ku saleysan sii wadida sii wadida faa'iidooyinka hogaaminta ee duurka silikoon substrate buluug nalka LED chips, alaabtayadu waxay sii wadaan inay ku fidiyaan beeraha iftiinka ee u baahan iftiinka jihada iyo wax soo saarka tayada sare leh, sida chips nalka iftiinka cad oo leh waxqabadka sare iyo qiimaha lagu daray Nalalka iftiinka taleefanka gacanta ee LED, nalalka baabuurta LED, nalalka waddooyinka LED, iftiinka dambe ee LED, iwm, si tartiib tartiib ah u dejinaya booska faa'iidada leh ee chips substrate Silicon LED chips ee warshadaha kala qaybsan.

3. Saadaasha isbeddelka horumarinta ee LED substrate silicon

Hagaajinta hufnaanta iftiinka, dhimista kharashyada ama wax ku oolnimada kharashku waa mawduuc weligeed ah ee ku jirawarshadaha LED. Qaybaha filimka khafiifka ah ee loo yaqaan 'Silicon substrate chips' waa in la baakadeeyaa ka hor inta aan la isticmaalin, iyo kharashka baakadaha qayb weyn oo ka mid ah kharashka codsiga LED. Ka bood baakooyinka dhaqameed oo si toos ah ugu xidh qaybaha ku dul sabirka. Si kale haddii loo dhigo, baakadaha cabirka chip (CSP) ee waferka ayaa ka boodi kara dhamaadka baakadaha oo si toos ah u geli doona dhamaadka arjiga dhamaadka chip-ka, sii yaraynta qiimaha codsiga ee LED. CSP waa mid ka mid ah rajada GaN ee LED-yada ku saleysan silicon. Shirkadaha caalamiga ah sida Toshiba iyo Samsung ayaa sheegay in CSP ay u isticmaaleen nalalka Silicon-based LEDs, waxaana la rumeysan yahay in alaabada la xiriirta ay dhowaan suuqa ka heli doonaan.

Sanadihii la soo dhaafay, meel kale oo kulul ee warshadaha LED waa Micro LED, oo sidoo kale loo yaqaan heerka micrometer LED. Cabbirka Micro LEDs wuxuu u dhexeeyaa dhowr mikromitir ilaa tobanaan mikromitir, ku dhawaad ​​​​isku heer la mid ah dhumucda filimada khafiifka ah ee GaN ee koray epitaxy. Miisaanka mikrometerka, agabka GaN waxaa si toos ah looga dhigi karaa GaNLED si toos ah u habaysan iyada oo aan loo baahnayn taageero. Taasi waa in la yiraahdo, habka diyaarinta Micro LEDs, substrate-ka koritaanka GaN waa in la saaraa. Faa'iidada dabiiciga ah ee LED-yada silikoon ku salaysan waa in substrate-ka silikoon laga saari karo kiimikada qoyan ee qoyan oo keliya, iyada oo aan wax saameyn ah ku yeelan walxaha GaN inta lagu jiro habka saarista, hubinta dhalidda iyo isku halaynta. Marka laga eego dhinacan, tignoolajiyada silikoon substrate LED waxay ku xidhan tahay inay meel ku yeelato saaxadda Micro LEDs.